C5027 Datasheet – NPN, TO-220, KSC5027 (Transistor)

Part Number : C5027, KSC5027

Function : NPN Silicon Transistor

Package : TO-220 Type

Manufactures : Fairchild Semiconductor

1 page ( 1.Base 2.Collector 3.Emitter )
C5027 image

Description :

High Voltage and High Reliability

• High Speed Switching
• Wide SOA

2 page
pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1100 V
2. Collector to Emitter Voltage : Vceo = 800 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 3 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

 

Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, RBE =∞ IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 60 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5027 Typical Characteristics 4.0 3.6 1000 VCE = 5V IC[A], COLLECTOR CURRENT 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 8 hFE, DC CURRENT GAIN 100 IB IB IB IB = 250mA = 200mA = 150mA = 100mA IB = 80mA IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA IB = 10mA IB = 0 9 10 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 4.0 IC = 5 IB 3.5 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 3.0 1 V BE(sat) 2.5 2.0 0.1 V CE(sat) 1.5 1.0 0.5 0.01 0.01 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 tSTG VCC = 400V 5.IB1 = -2.5.IB2 = IC ICMAX.(Pulse) IC[A], COLLECTOR CURRENT 10 tON, tSTG, tF [µ s], TIME ICMAX(Continuous) 1 m 10 10 1 1m s 0µ tON tF DC s s 0.1 0.1 0.01 0.01 0.1 1E-3 1 10 1 10 100 1000 10000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5027 Typical Characteristics ( […]

3 page
image

C5027 Datasheet