C5027 Datasheet – KSC5027 Transistor

Part Number : C5027

Function : KSC5027

Manufactures : Fairchild Semiconductor

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KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 3 10 1.5 50 150 – 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, RBE =∞ IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω 60 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5027 Typical Characteristics 4.0 3.6 1000 VCE = 5V IC[A], COLLECTOR CURRENT 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 8 hFE, DC CURRENT GAIN 100 IB IB IB IB = 250mA = 200mA = 150mA = 100mA IB = 80mA IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA IB = 10mA IB = 0 9 10 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 4.0 IC = 5 IB 3.5 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 3.0 1 V BE(sat) 2.5 2.0 0.1 V CE(sat) 1.5 1.0 0.5 0.01 0.01 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 tSTG VCC = 400V 5.IB1 = -2.5.IB2 = IC ICMAX.(Pulse) IC[A], COLLECTOR CURRENT 10 tON, tSTG, tF [µ s], TIME ICMAX(Continuous) 1 m 10 10 1 1m s 0µ tON tF DC s s 0.1 0.1 0.01 0.01 0.1 1E-3 1 10 1 10 100 1000 10000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5027 Typical Characteristics ( […]

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C5027 Datasheet


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