C5071 – 2SC5071

Part Number : C5071

Function : 2SC5071

Manufactures : Allegro Micro Systems

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Description :

2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ (Ta=25°C) 2SC5071 Unit µA µA 19.9±0.3 V V V MHz pF 4.0 a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1.0max tstg (µs) 3.0max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I C – V BE Temperature Characteristics (Typical) (V CE =4V) 12 1A 10 Collector Current I C (A) 80 0m A 60 0m A 10 V B E (sat) 1 –55˚C (Case Temp) Collector Current I C (A) 8 400m A 8 6 25˚C (Cas 125˚C (C e Temp) as e 25 Temp ) ˚C 6 emp se T (Ca 25˚C mp 4 4 se I B =100mA 2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 –5 0 0 1 2 3 4 10 0 0 0.5 Base-Emittor Voltage V B E (V) 12 12 5˚ C 2 –55˚C 5˚ 5˚C C (C (Cas (Ca e Te Te 200mA Collector-Emitter Voltage V C E (V) Collector Current I C (A) (V C E =4V) 40 125˚C DC Cur rent Gain h F E 5 θ j – a (˚ C/W) h FE – I C Characteristics (Typical) t on• t s tg • t f ( µ s) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 3 25˚C –30˚C 1 0.5 tf Transient Thermal Resistance V C C 200V I C :I B1 :I B2 =10:1:–2 t s tg Swi tchi ng T im e 1 0.5 10 8 0.02 0.05 0.1 0.5 1 5 10 12 0.1 0.5 t on 1 Collector Current I C (A) 5 10 12 0.3 1 10 Time t(ms) 100 mp) emp ase T ) ) ) 1.0 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 30 10 0µ s Reverse Bias Safe Operating Area 30 100 P c – T a Derating 10 Co lle ctor Cu rren t I C (A) Collector Curr ent I C (A) 5 10 5 M aximum Power Dissipa ti on P C (W) W ith In fin ite he 50 at si nk 1 0.5 Without Heatsink Natural Cooling 1 0.5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Duty:less than 1% 0.1 5 10 50 100 500 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 124 […]

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C5071 Datasheet


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