C5198 PDF Datasheet – 2SC5198, NPN Transistor

This is one of the transistor types.

Part Number : C5198

Function : NPN Transistor

Package : TO-3PN Type

Manufactures : Toshiba Semiconductor

See the preview image and the C5198 transistor PDF file for more information.

Images :

C5198 transistor

Description :

TOSHIBA Transistor Silicon NPN Triple Diffused Type Transistor.

2SC5198

• High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A

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C5198 image

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Note :

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-11-02 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 1 A hFE (2) VCE (sat) VCE = 5 V, IC = 5 A IC = 7 A, IB = 0.7 A VBE VCE = 5 V, IC = 5 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking 2SC5198 Min Typ. Max Unit ― ― 5.0 μA ― ― 5.0 μA 140 ― ― V 55 ― 160 35 83 ― ― 0.3 2.0 V ― 0.9 1.5 V ― 30 ― MHz ― 170 ― pF TOSHIBA C5198 Characteristics indicator Part No. (or abbreviation code) Lot No. NOTE 2: Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-11-02 2SC5198 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) 10 250 8 IC – VCE 200 150 Common emitter Tc = 25°C 100 6 50 40 4 30 2 20 IB = 10 mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) VCE (sat) – IC 10 1 0.1 Tc = −25°C Tc = 100°C Tc = 25°C 0.01 0.01 0.1 1 Common emitter […]

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Applications

Power Amplifier

C5198 Datasheet