Part Number : C5353
Function : 2SC5353
Manufactures : Toshiba
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Description :
2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.0 25 150 www.DataSheet.co.kr Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −55 to 150 Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Datasheet pdf – http://www.DataSheet4U.net/ 2SC5353 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Test Condition VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.15 A IC = 1.2 A, IB = 0.24 A IC = 1.2 A, IB = 0.24 A Output 300 Ω Min ― ― 900 800 10 15 ― ― Typ. ― ― ― ― ― ― ― ― Max 100 10 ― ― ― ― 1.0 1.3 V V Unit μA μA V V Rise time tr IC IB1 IB2 ― ― 0.7 20 μs IB1 Switching time Storage time tstg Input IB2 ― ― 4.0 μs Fall time tf VCC ≈ 360 V IB1 = 0.24 A, IB2 = −0.48 A, duty cycle ≤ 1% ― ― 0.5 Marking www.DataSheet.co.kr C5353 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 Datasheet pdf – http://www.DataSheet4U.net/ 2SC5353 IC – VCE Common emitter Tc = 25°C 3 Common emitter 1.0 VCE = 5 V IC – VBE 3 (A) 0.6 2 0.5 0.4 0.3 0.2 1 0.1 0.05 IB = 0.02 A 0 0 2 4 6 8 10 (A) Collector current IC 2 1 0.8 Collector current IC Tc = 100°C 25 −55 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 1000 10 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 5 DC current gain hFE […]
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