Part Number : C5855, 2SC5855
Function : Silicon NPN Transistor
Package : TO-220 Type
Manufactures : Toshiba Semiconductor
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Description :
2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING Applications High Voltage Low Saturation Voltage High Speed Unit: mm : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 700 5 10 20 5 50 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A Weight: 5.5 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector − Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 6 A VCE = 5 V, IC = 8 A IC = 8 A, IB = 2 A IC = 8 A, IB = 2 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 6 , IB1 (end) = 0.8 A fH = 32 kHz ICP = 5.5 A, IB1 (end) = 0.8 A fH = 80 kHz Min ― ― 700 28 6.2 4.3 ― ― ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― 1.0 2 120 2.8 0.2 2.3 0.1 Max 1 100 ― 60 10 6.7 3 1.4 ― ― ― ― ― ― V V MHz pF µs ― UNIT mA µA V µs 1 2004-5-18 2SC5855 IC – VCE 10 2.5 1.0 8 1.2 1.8 2.0 1.4 1.6 IC (A) 0.8 0.6 6 0.4 IB = 0.2 A Collector current 4 2 Common emitter Tc = 25℃ 0 2 4 6 8 10 0 Collector-emitter voltage VCE (V) hFE – IC 100 Tc = 100°C 25 hFE −25 10 DC current gain Common emitter 1 0.01 VCE = 5 V 0.1 1 10 Collector current IC (A) IC – VBE 10 Common emitter VCE = 5 V 8 IC (A) 6 Tc = 100°C 4 −25 Collector current 2 25 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 2 2004-5-18 2SC5855 VCE – IB 10 Common emitter Tc = −25℃ 10 VCE(sat) – IC 10 6 Common emitter Tc = −25℃ IC/IB = 4 (V) 8 Collector-emitter saturation voltage VCE(sat) (V) VCE Collector-emitter voltage 6 5 6 7 Ic = 8 A 1 8 4 0.1 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0.01 1 10 100 Base current IB (A) Collector current IC (A) VCE – IB 10 Common emitter Tc = 25℃ 10 10 VCE (sat) – IC 6 Common emitter Tc = 25℃ (V) 8 Collector-emitter saturation voltage VCE (sat) (V) VCE 1 IC/IB = 4 Collector-emitter voltage 6 5 6 7 Ic = 8 A 8 4 0.1 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0.01 1 10 100 Base current IB (A) Collector current IC (A) VCE – IB 10 Common emitter Tc = 100℃ 10 10 […]
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