C6000 Datasheet – Vcbo=120V, NPN Transistor

This post explains for the semiconductor C6000.

The Part Number is C6000.

The function of this semiconductor is 2SC6000.

Manufacturers : Toshiba Semiconductor

Preview images :

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C6000 image

Description :

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 120 120 50 6 7.0 10.0 0.5 20 150 −55 to 150 V V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan […]

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C6000 Datasheet

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