C6010 – 2SC6010

Part Number : C6010

Function : 2SC6010

Manufactures : Toshiba

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Description :

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC6010 Unit: mm • High speed switching: tf = 0.24μs (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C VCBO VCEX VCEO VEBO IC ICP IB PC 600 V 600 V 285 V 8V 1.0 A 2.0 0.5 A 1.0 W 1. Base 2. Collector 3. Emitter JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA Weight: 2-7D101A g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 Free Datasheet http:/// Electrical Characteristics (Ta = 25°C) 2SC6010 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) VCB = 600 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.2 A IC = 0.6 A, IB = 75 mA IC = 0.6 A, IB = 75 mA 20 μs tr VCC ≈ 200 V IB1 667 Ω IB1 IC IB2 OUTtstg IB21 PUT INPUT IB1 = 20 mA, −IB2 = 50 mA tf DUTY CYCLE ≤ 1% Min Typ. Max Unit ― ― 100 μA ― ― 100 μA 600 ― ― V 285 ― ― V 80 ― 200 100 ― 200 60 ― ― ― ― 1.0 V ― ― 1.3 V ― ― 0.4 ― ― 3.0 μs ― ― 0.24 Marking C6010 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 Free Datasheet http:/// Collector current IC (A) 1.0 200 0.8 0.6 IC – VCE 150 100 80 60 40 20 0.4 IB = 5 mA 0.2 Common emitter Ta=25℃ Pulse test 0 0 0.4 0.8 1.2 1.6 2 Collector-emitter voltage VCE (V) 1000 Common emitter VCE = 5 V Pulse test hFE – IC Ta = 100°C 100 25 −55 10 1 0.001 0.01 0.1 Collector current IC (A) 1 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 2SC6010 2.0 Common emitter Ta=25℃ Pulse test 1.6 40 1.2 IC – VCE 60 80 200 […]

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C6010 Datasheet


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