C6012 – 2SC6012

Part Number : C6012

Function : 2SC6012

Manufactures : Panasonic Semiconductor

Images :

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C6012 image

2 page
pinout

Description :

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current – Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 700 1 700 7 3 15 24 60 3 150 −55 to +150 °C °C Unit V V V A A A W 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage – Collector-base cutoff current (Emitter open) Forward current transfer ratio – Collector-emitter saturation voltage – Base-emitter saturation voltage Transition frequency Storage time Fall time – – Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 7.0 A Conditions IE = 750 mA, IC = 0 VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VCE = 5 V, IC = 7.0 A IC = 7.0 A, IB = 1.75 A IC = 7.0 A, IB = 1.75 A VCE = 10 V, IC = 0.5 A, f = 0.5 MHz IC = 7.0 A, Resistance loaded IB1 = 1.75 A, IB2 = −3.5 A Min 7 Typ Max −2 50 1 Unit V V µA mA  V V MHz µs µs 7 12 3.0 1.5 2.1 5.0 0.5 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement 22.0±0.5 (1.2) Publication date: July 2004 SJD00321AED 1 2SC6012 PC  Ta 80 10 IC  VCE 2.0 A 1.8 A 9 1.6 A 1.4 A IC  VBE 12 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A Collector power dissipation PC (W) 70 60 50 Collector current IC (A) (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink VCE = 5 V 10 8 7 6 5 4 3 2 Collector current IC (A) 8 (1) 40 30 20 10 (3) 0 0 25 50 75 100 125 150 6 0.2 A 4 Ta = 120°C 2 25°C −40°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (2) 1 0 0 1 2 3 4 5 6 7 8 IB = 0 A 9 10 0 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 4 100 hFE  IC VCE = 5 V Safe operation area 100 ICP 10 IC t= 10 ms Non repetitive pulse TC = 25°C t= 1 ms t= 100 µs Forward current transfer ratio hFE 1 Ta = 120°C 25°C 0.1 −40°C Collector current IC (A) Ta = 120°C 1 DC 10 25°C 10−1 −40°C 10−2 0.01 0.1 1 10 1 0.1 1 10 10−3 1 10 100 1 000 Collector current IC (A) Collector current IC (A) C […]

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C6012 Datasheet


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