Part Number : C6093
Function : 2SC6093
Manufactures : Sanyo Semicon Device
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Description :
Ordering number : ENA0274 2SC6093 SANYO Semiconductors DATA SHEET 2SC6093 Features • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 5 5 12 2.0 25 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 VF tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A IC=1.35A, IB=0.27A IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A IEC=4A IC=1.8A, IB1=0.36A, IB2=–0.72A 800 40 0.1 130 0.3 2 1.5 10 5.3 7.5 2 0.2 V µs Ratings min typ max 10 1.0 Unit µA mA V mA V V V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11707KC TI IM TC-00000456 No. A0274-1/4 2SC6093 Package Dimensions unit : mm (typ) 7509-003 10.0 3.2 3.5 7.2 Switching Time Test Circuit 4.5 2.8 PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 100µF VBE= –5V + 470µF VCC=200V RL=111Ω 16.1 16.0 0.9 1.2 0.75 14.0 3.6 1.2 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 2.55 2.55 0.6 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 IC — VCE 1.5 A 5.0 4.5 IC — VBE VCE=5V Collector Current, IC — A Collector Current, IC — A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.6A 0.5A 0.4A 7A 0. 8A 0. 9A 0. 1.0A 0.3A 1.1A 0.2A 1.2A 0.1A 1.3A 0.05A […]
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