C8050 – NPN Silicon Transistor

Part Number : C8050

Function : NPN Silicon Transistor

Manufactures : Suntac

Images :

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C8050 image

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pinout

Description :

S STC8050 0 NPN Silicon Transistor 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to STC8550 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 40 6 1.5 1 150 65 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Test Condition IC= 100µA, IE=0 IC= 2mA, IB=0 IE= 100µA, IC=0 VCB= 35V, IE=0 VEB= 6V, IC=0 VCE= 1V, IC= 5mA VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA IC= 800mA, IB= 80mA IC= 800mA, IB= 80mA VCE= 1V, IC= 10mA VCB= 10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= 10V, IC= -50mA Min. 40 40 6 45 85 40 100 Typ. 170 160 80 0.28 0.98 0.66 15 200 Max. 100 100 Units V V V nA nA 300 0.5 V 1.2 V 1.0 V pF MHz hFEClassification Classification hFE2 A 85 ~ 160 B 120 ~ 200 C 200 ~ 400 Typical Characteristics STC8050 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -0.5 IB=-4.0mA -0.4 IB=-3.5mA IB=-3.0mA -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic -10000 IC=10IB -1000 -100 VBE(sat) VCE(sat) -10 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT -1000 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 f=1MHz IE=0 IC[mA], COLLECTOR CURRENT hFE, DC CURRENT GAIN 1000 100 VCE = -1V 10 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain -1000 -100 VCE = -1V -10 -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 VBE[V], BASE-EMITTER VOLTAGE -1.2 Figure 4. Base-Emitter On Voltage 1000 VCE=-10V 10 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE 1 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product […]

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C8050 Datasheet


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