CS20N50ANH – Silicon N-Channel Power MOSFET

Part Number : CS20N50ANH

Function : Silicon N-Channel Power MOSFET

Manufactures : Huajing Discrete Devices

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CS20N50ANH image

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Description :

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS20N50 ANH General Description: CS20N50 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.. Features: l Fast Switching 500 20 230 0.25 l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 500 20 12.5 80 ±30 1500 90 4.3 5.0 230 1.84 150,–55 to 150 300 V A W Ω Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012 Huajing Discrete Devices ○R CS20N50 ANH Electrical Characteristics(Tc= 25℃ unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions VDSS ΔBVDSS/ΔTJ IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250µA ID=250uA,Reference25℃ VDS = 500V, VGS= 0V, Ta = 25℃ VDS =400V, VGS= 0V, Ta = 125℃ VDS =0V, VGS= 30V VDS =0V, VGS= -30V ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Pulse width tp≤380µs,δ≤2% VGS=10V,ID=10A VDS = VGS, ID = 250µA Rating Units Min. Typ. Max. 500 — — V — 0.55 — V/℃ — — 1 µA 100 — — 100 nA — — -100 nA Rating Min. Typ. Max. — 0.25 0.3 2.0 — 4.0 Units Ω V Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Resistive Switching Characteristics Symbol Parameter td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge Test Conditions VDS=15V, ID =10A VGS = 0V VDS = 25V f = 1.0MHz Test Conditions ID =20A VDD = 250V RG = 25Ω ID =20A VDD =250V VGS = 10V Rating Min. Typ. Max. 17 — 2863 — 285 — 25 Units S pF Rating Min. Typ. Max. — 33 […]

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CS20N50ANH Datasheet

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