D1047 – High power NPN epitaxial planar bipolar transistor

Part Number : D1047

Function : High power NPN epitaxial planar bipolar transistor

Manufactures : STMicroelectronics

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Description :

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. 3 2 1 TO-3P Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD1047 April 2011 Marking 2SD1047 Package TO-3P Doc ID 018729 Rev 1 Packaging Tube 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ____max 2SD1047 Value 200 140 6 12 20 100 -65 to 150 150 Unit V V V A A W °C °C Value 1.25 Unit °C/W 2/10 Doc ID 018729 Rev 1 2SD1047 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 200 V 0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = 6 V 0.1 µA V(BR)CEO(1) Collector-emitter breakdown voltage (IB = 0) IC = 50 mA 140 V V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA 200 V V(BR)EBO(1) Emitter-base breakdown voltage (IC = 0) IE = 1 mA 6 V VCE(sat)(1) Collector-emitter saturation voltage IC = 5 A IC = 7 A IB = 500 mA IB = 700 mA 0.5 V 0.7 V VBE Base-emitter voltage VCE = 5 V IC = 5 A 1.3 V hFE DC current gain IC = 1 A IC = 5 A VCE = 5 V VCE = 4 V 60 50 200 fT Transition frequency IC = 0.5 A VCE = 12 V 20 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 150 pF Resistive Load ton Turn-on time tstg Storage time tf Fall time VCC = 60 V IC = 5 A IB1 = -IB2 = 0.5 A 0.22 µs 4.3 µs 0.5 µs 1. Pulse duration = 300 µs, duty cycle ≤ 1.5 % Doc ID 018729 Rev 1 3/10 Electrical characteristics 2.1 Electrical characteristics (curves) 2SD1047 Figure 2. Safe operating area Figure 3. Output characteristics Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage 4/10 Doc ID 018729 Rev 1 2SD1047 2.2 Test circuit Figure 8. Resistive load switching test circuit Electrical characteristics 1) Fast electronic switch 2) Non-inductive resistor Doc ID 018729 Rev 1 5/10 Electrical characteristics Table 5. TO-3P mechanical data Dim. A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 L2 P Q Q1 Min. 4.6 1.45 1.20 0.80 1.80 2.80 0.55 19.70 15.40 5.15 19.50 18.20 3.10 mm Typ. 1.50 1.40 1 0.6 [...]

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D1047 Datasheet


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