D1138 – 2SD1138

Part Number : D1138

Function : 2SD1138

Manufactures : Hitachi Semiconductor

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D1138 image

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Description :

2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1138 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC – Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Rating 200 150 6 2 5 1.8 30 150 –45 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 6 — 1 Typ — — — — — — — 20 Max — — 1 320 — 3.0 1.0 — Unit V V µA Test conditions I C = 50 mA, RBE = ∞ I E = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 I C = 500 mA, IB = 50 mA*2 VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1- hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance Note: VCE (sat) VBE Cob 60 60 — — — V V pF 1. The 2SD1138 is grouped by h FE1 as follows. 2. Pulse test. C 100 to 200 D 160 to 320 B 60 to 120 2 2SD1138 Maximum Collector Dissipation Curve 40 Collector power dissipation Pc (W) 10 30 5 Collector current IC (A) (15 V, 2 A) IC (max) 1.0 Continuous 0.5 0.2 0.1 200 (150 V, 65 mA) 0.05 2 5 10 20 50 100 200 Collector to emitter voltage VCE (V) 2 DC O pe Area of Safe Operation 20 TC 10 1.8 W 0 Ta (60 V, 0.4 A) ra tio n (T C = 25 ) °C 50 100 150 Ambient temperature Ta (°C) Case temperature TC (°C) Typical Output Characteristics 1.0 TC = 25°C 10 1,000 Collector current IC (mA) 9 8 7 6 5 4 0.4 3 2 0.2 1 mA IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 500 200 100 50 20 10 5 2 1 0 Typical Transfer Characteristics VCE = 4 V Collector current IC (A) 0.8 0.6 TC = 75°C 25 –25 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 3 2SD1138 DC Current Transfer Ratio vs. Collector Current 500 DC current transfer ratio hFE 200 100 50 20 10 5 10 VCE = 4 V TC = 75°C 25 –25 Collector to emitter saturation voltage VCE (sat) (V) 0.5 0.2 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB TC = 75°C 0.1 0.05 0.02 0.01 0.005 10 20 50 100 200 500 1,000 2,000 Collector current IC (mA) –25 25 20 50 100 200 500 1,000 2,000 Collector current IC (mA) 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-2 […]

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D1138 Datasheet


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