Part Number: D1710, 2SD1710
Function: 800V, 5A, NPN Transistor
Package: TO-3PML type
Manufacturer: SavantIC
Images:
1 page
Description:
D1710 is Silicon NPN Power Transistor.
Features:
1. With TO-3PML package
2. high speed
3. High reliability.
Applications:
1. Ultrahigh-definition CRT display
2. Horizontal deflection output applications
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 5 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C ( Tc=25°C )
7. Storage Temperature: Tsg = -55 ~ +150°C
PINNING PIN 1 2 3 Description Base Collector Emitter Product Specification 2SD1710 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1710 CHARACTERISTICS www.datTasj=h2ee5t4u.ucnomless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8 A VBEsat Base-emitter saturation voltage IC=4A;IB=0.8 A IEBO Emitter cut-off current VEB=4V; IC=0 ICBO Collector cut-off current ICES Collector cut-off current hFE DC current gain VCB=800V; IE=0 VCE=1500V; RBE=0 IC=0.5 A ; VCE=5V MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 0.1 mA 10 µA 1.0 mA 10 40 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SD1710 Fig.2 Outline dimensions 3 […]
3 page
