D1710 Transistor – 800V, 5A, NPN, 2SD1710 ( Datasheet PDF )

Part Number : D1710, 2SD1710

Function : 800V, 5A, NPN Transistor

Package : TO-3PML type

Manufactures : SavantIC

Images :

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D1710 image

Description :

D1710 is Silicon NPN Power Transistor.

Features :

1. With TO-3PML package

2. high speed

3. High reliability.

Applications :

1. Ultrahigh-definition CRT display

2. Horizontal deflection output applications

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 5 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C ( Tc=25°C )

7. Storage Temperatue : Tsg = -55 ~ +150°C

PINNING PIN 1 2 3 Description Base Collector Emitter Product Specification 2SD1710 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1710 CHARACTERISTICS www.datTasj=h2ee5t4u.ucnomless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8 A VBEsat Base-emitter saturation voltage IC=4A;IB=0.8 A IEBO Emitter cut-off current VEB=4V; IC=0 ICBO Collector cut-off current ICES Collector cut-off current hFE DC current gain VCB=800V; IE=0 VCE=1500V; RBE=0 IC=0.5 A ; VCE=5V MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 0.1 mA 10 µA 1.0 mA 10 40 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SD1710 Fig.2 Outline dimensions 3 […]

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D1710 Datasheet