D1760 – 2SD1760

Part Number : D1760

Function : 2SD1760

Manufactures : ROHM Electronics

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D1760 image

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Description :

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. !External dimensions (Units : mm) 2SD1760 1.5±0.3 6.5±0.2 0.2 5.1 + −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 2SD1864 6.8±0.2 2.5±0.2 0.3 5.5 + −0.1 9.5±0.5 0.9 1.5 !Structure Epitaxial planar type NPN silicon transistor 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) 0.5±0.1 2.54 2.54 14.5±0.5 0.75 0.65±0.1 2.5 0.65Max. 1.0 4.4±0.2 0.9 (1) (2) (3) 1.05 0.45±0.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO IC Limits 60 50 5 3 4.5 15 1 150 −55~+150 Unit V V V A (DC) A (Pulse) ∗1 PC Tj Tstg W (Tc=25°C)∗2 W °C °C Junction temperature Storage temperature ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 60 50 5 − − − 82 − − Typ. − − − − − 0.5 − 90 40 Max. − − − 1 1 1 390 − − Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=40V VEB=4V IC/IB=2A/0.2A Conditions ∗ ∗ ∗ VCE=3V, IC=0.5A VCE=5V, IE=−500mA, f=30MHz VCB=10V, IE=0A, f=1MHz !Packaging specifications and hFE Package Code Type 2SD1760 2SD1864 hFE PQR PQR − Basic ordering unit (pieces) TL 2500 Taping TV2 2500 − hFE values are classified as follows: Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves 10 5 3.0 VCE = 3V COLLECTOR CURRENT : IC (A) Ta = 25°C 45mA 50mA COLLECTOR CURRENT : IC (A) 2.5 2.0 COLLECTOR CURRENT : IC (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 BASE TO EMITTER VOLTAGE : VBE (V) Ta = 100°C 25°C −25°C 40mA 35mA 30mA 25mA 20mA 3.0 2.5 2.0 1.5 20mA 15mA 50mA 45mA 40mA 35mA 30mA 25mA Ta = 25°C 15mA 1.5 10mA 10mA 1.0 0.5 0 0 5mA 1.0 IB = 5mA 0.5 0 0 PC = 15W IB = 0mA 1 2 3 4 5 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 1000 500 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE Fig.2 Grounded emitter output characteristics ( Ι ) 1000 500 Fig.3 Grounded-emitter output characteristics( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V […]

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D1760 Datasheet


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