D1843 Datasheet – 2SD1843 Transistor

Part Number : D1843

Function : 2SD1843

Manufactures : NEC

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DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. Features • High DC current gain due to Darlington connection • High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode • Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)- PT(Ta = 25°C) Tj Tstg Ratings 60±10 60±10 7.0 ±1.0 ±2.0 1.0 150 −55 to +150 – PW ≤ 10 ms, duty cycle ≤ 50% Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain ICBO IEBO hFE2*- hFE2*- VCB = 40 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 0.2 A VCE = 2.0 V, IC = 0.5 A Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCE(sat)*- VBE(sat)*- tON tstg tf IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, IB = 0.5 mA IC = 0.5 A, RL = 100 Ω IB1 = −IB2 = 0.1 mA, VCC = 50 V – *Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 2000 to 5000 4000 to 10000 8000 to 30000 MIN. 1000 2000 TYP. 0.5 1.0 1.0 MAX. 0.5 1.0″ 30000 1.5 2.0 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Unit µA mA V V µs µs µs Document No. D16200EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 21090928 TYPICAL CHARACTERISTICS (Ta = 25°C) 2SD1843 2 Data Sheet D16200EJ1V0DS SWICHING TIME (ton, tstg, tf) TEST CIRCUIT 2SD1843 Data Sheet D16200EJ1V0DS 3 2SD1843 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC’s data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any li […]

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D1843 Datasheet

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