Part Number: D1913, 2SD1913
Function: 60V, 3A, NPN Transistor
Package: TO-220ML Type
Manufacturer: Sanyo Semicon Device
Images:
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Description
D1913 is NPN Epitaxial Planar Silicon Transistor.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. General power amplifier.
Features
1. Wide ASO (Adoption of MBIT process).
2. Low saturation voltage.
3. High reliability.
4. High breakdown voltage.
5. Micaless package facilitating mounting.
Electrical Characteristics at Ta=25°C :
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page. 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000 TS IM 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol 2 […]
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