D1913 Datasheet – 60V, 3A, NPN Transistor, 2SD1913 – Sanyo

Part Number : D1913, 2SD1913

Function : 60V, 3A, NPN Transistor

Package : TO-220ML Type

Manufactures : Sanyo Semicon Device

Images :

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D1913 image

Description :

D1913 is NPN Epitaxial Planar Silicon Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 60 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 3 A

5. Collector Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. General power amplifier.

Features :

1. Wide ASO (Adoption of MBIT process).

2. Low saturation voltage.

3. High reliability.

4. High breakdown voltage.

5. Micaless package facilitating mounting.

Electrical Characteristics at Ta=25°C :

Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page.  1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000 TS IM 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol 2 […]

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D1913 Datasheet