D1913 Datasheet – 2SD1913 Transistor

Part Number : D1913

Function : 2SD1913

Manufactures : Sanyo Semicon Device

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Description :

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features Wide ASO (Adoption of MBIT process). • Low saturation voltage. www.DataSheet4U.net • High reliability. • High breakdown voltage. • Micaless package facilitating mounting. • 10.0 3.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 20 150 −55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000 TS IM 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol hFE1 hFE2 fT Cob VCE(sat) VBE V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCE=(–)5V, IC=(-)0.5A VCE=(–)5V, IC=(-)3A VCE=(–)5V, IC=(-)0.5A VCB=(–)10V, f=1MHz IC=(–)2A, IB=(–)0.2A VCE=(–)5V, IC=(-)0.5A IC=(–)1mA, IE=0 IC=5mA, RBE=∞ IE=(-)1mA, IC=0 (–)60 (–)60 (–)6 Ratings min 70* 20 100 (60)40 (–)0.4 (–)0.8 (–)1 (–)1 MHz pF V V V V V typ max 280* Unit * : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows : Rank hFE Q 70 to 140 R 100 to 200 S 140 to 280 mA–45m –2.5 A –4 0m 2 […]

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D1913 Datasheet


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