D2011UK PDF Datasheet – 65V, 8A, GATE RF SILICON FET

Part Number : D2011UK

Function : METAL GATE RF SILICON FET

Package : DBC1 Type

Manufactures : Seme LAB

Images :

1 page
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Description :

D2011UK IS METAL GATE RF SILICON FET.

Features :

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND Applications

• LOW Crss

• LOW NOISE

• HIGH GAIN

Applications :

• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) :

PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 70W 65V ±20V 8A –65 to 150°C 200°C Document Number 2543 Issue 1 D2011UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) :

Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance- Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.8A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1.6A 1 1.44 10 40 20:1 65 Typ. Max. Unit V 8 8 7 mA mA V S dB % — VGS(th) Gate Threshold Voltage- h VSWR Load Mismatch Tolerance Ciss Coss Crss 96 48 4 pF pF pF – Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2543 Issue 1 […]

 

D2011UK Datasheet