D2011UK – METAL GATE RF SILICON FET

Part Number : D2011UK

Function : METAL GATE RF SILICON FET

Manufactures : Seme LAB

Images :

1 page
D2011UK image

2 page
pinout

Description :

TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 70W 65V ±20V 8A –65 to 150°C 200°C Document Number 2543 Issue 1 D2011UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance- Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.8A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1.6A 1 1.44 10 40 20:1 65 Typ. Max. Unit V 8 8 7 mA mA V S dB % — VGS(th) Gate Threshold Voltage- h VSWR Load Mismatch Tolerance Ciss Coss Crss 96 48 4 pF pF pF – Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.5°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2543 Issue 1 […]

3 page
image

D2011UK Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.