D2012 – Si NPN Transistor

Part Number : D2012

Function : Si NPN Transistor

Manufactures : Wuxi Youda Electronics

Images :

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D2012 image

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Description :

YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª Description AND Features *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 7 30 1.5 3 7 0.6 +150 -55¡« +150 UNIT V V V W W A A A ¡æ ¡æ ELECTRICAL CHARACTERISTICS (Tamb=25¡æ ,all voltage referenced to GND Unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob DataSheet4U.com TEST CONDITIONS VcB=50V, IE=0 VEB=5V, IC=0 VcE=5V, IC=20mA VcE=5V, IC=0.5A Ic=3A, IB=0.3A Ic=2A, IB=0.2A VcE=5V, IC=0.1A VcB=10V, IE=0,f=1MHz MIN TYP MAX 100 100 UNIT DataShee nA nA 30 100 200 0.3 1.0 5 80 400 0.5 2.0 V V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 100¡« 200 160¡« P 320 200¡« E 400 WuXi YouDa Electronics Co., Ltd Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel£º 86-755-83740369 13823533350 Fax£º 86-755-83741418 DataSheet4U.com Ver 3.1 1 of 1 2004-9-20 DataSheet4U.com DataSheet 4 U .com […]

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D2012 Datasheet

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