D2058 – KSD2058

Part Number : D2058

Function : KSD2058

Manufactures : Fairchild Semiconductor

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Description :

KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.5 1.5 25 150 – 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO hFE VCE(Sat) VBE(on) fT Cob tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 50mA, IB = 0 VCE = 5V, IC = 0.5A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = – IB2 = 0.2A RL = 15Ω 35 0.65 1.3 0.65 3 0.4 60 8 1.5 V V MHz pF µs µs µs Min. Typ. Max. 10 1 Units µA mA V hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2058 Typical Characteristics 3.0 IB = 90mA IB = 80mA IB = 70m A 1000 IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA VCE = 5V Ic[A], COLLECTOR CURRENT 2.5 2.0 1.5 hFE, DC CURRENT GAIN 100 1.0 IB = 10mA 0.5 IB = 0mA 0.0 0 1 2 3 4 5 6 10 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 1 10 VCE(sat)[V], SATURATION VOLTAGE Ic = 10 IB ICmax(pulse) 1mS m 10 IC[A], COLLECTOR CURRENT 10 IC(max) s DC 1 S 0m 1S 0.1 0.01 0.01 0.1 0.1 1 10 1 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 30 Tc=Ta 25 INFINITE HEAT SINK PC[W], POWER DISSIPATION 20 15 10 5 NO HEAT SINK 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International VCEOMAX Rev. A, February 2000 KSD2058 Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00×45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSV […]

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D2058 Datasheet


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