D2118 – 2SD2118

Part Number : D2118

Function : 2SD2118

Manufactures : Rohm

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Description :

Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction temperature PC Tj 1 10 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=10ms Unit V V V A(DC) A(Pulse) ∗1 W W(Tc=25°C) °C °C ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 50 20 6 − − − 120 − − Typ. − − − − − 0.3 − 150 35 Max. − − − 0.5 0.5 1.0 390 − − Unit V V V µA µA V − MHz pF Conditions IC=50µA IC=1mA IE=50µA VCB=40V VEB=5V IC/IB=4A/0.1A ∗ VCE=2V, IC=0.5A ∗ VCE=6V, IE=−50mA, f=100MHz VCE=20V, IE=0A, f=1MHz www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 – Rev.C 2SD2118 zPackaging specifications and hFE Type 2SD2118 Package Taping Code TL hFE Basic ordering unit (pieces) 2500 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 zElectrical characteristic curves 10 5 VCE=2V COLLECTOR CURRENT : IC (A) 2 Ta=100°C 1 25°C −25°C 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE 5000 2000 1000 500 Ta=100°C 25°C −25°C VCE=1V 200 100 50 20 10 5 1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 0.05 lC/lB=10 Ta=100°C 25°C −25°C 0.02 0.01 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 5 50mA 45mA 4 3 30mA Ta=25°C 25mA 20mA 15mA 40mA 35mA 10mA 2 5mA 1 0 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 5000 2000 1000 500 Ta=100°C 25°C −25°C VCE=2V 200 100 50 20 10 5 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.5 DC current gain vs. collector current ( ΙΙΙ ) 2 1 0.5 0.2 0. […]

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D2118 Datasheet


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