D2131 – 2SD2131

Part Number : D2131

Function : 2SD2131

Manufactures : Toshiba

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Description :

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 60 ± 10 60 ± 10 7 5 8 0.5 2.0 30 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD2131 Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Unclamped inductive load energy Symbol Test Condition ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) ES/B VCB = 45 V, IE = 0 VCE = 45 V, IB = 0 VEB = 6 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 3 V, IC = 3 A VCE = 3 V, IC = 5 A IC = 3 A, IB = 6 mA IC = 5 A, IB = 20 mA IC = 3 A, IB = 6 mA Min ― ― ― 50 50 2000 1000 ― ― ― (Note 1) 150 Typ. Max Unit ― 10 μA ― 10 μA ― 2.5 mA 60 70 V 60 70 V ― 15000 ―― 1.1 1.5 1.3 2.5 V 1.7 2.5 V ― ― mJ Turn-on time Switching time Storage time IB1 IB2 10 Ω ton 20 μs InputIB1 tstg IB2 Output ― 1.0 ― ― 4.0 ― μs Fall time VCC = 30 V tf ― 2.5 ― IB1 = −IB2 = 6 mA, duty cycle ≤ 1% Note 1: Measurement circuit for unclamped inductive load energy T.U.T IB1 VCC L = 10 mH IB2 IB1 = 0.1 A 0 PW ICP 0 IB2 = −0.1 A Clamp (C-B Zener) VCE IC Note 2: (1) Pulse width adjusted for desired ICP (ICP = 5.47 A min) (2) E = 1/2 L ICP2 Marking D2131 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 Colle […]

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D2131 Datasheet


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