D2396 – NPN Transistor

Part Number : D2396

Function : NPN Transistor

Manufactures : JCET

Images :

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D2396 image

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pinout

Description :

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2396 TRANSISTOR (NPN) TO – 220F FEATURES  Available in TO-220 F package  Darling connection provides high dc current gain (hFE)  Large collector power dissipation  Low frequency and Power amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 1. BASE 123 2. COLLECTOR 3. EMITTER Value 80 60 6 3 2 62.5 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltag V(BR)CBO IC=50μA, IE=0 80 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 Emitter-base breakdown voltage V(BR)EBO IE=50u A,IC=0 6 Collector cut-off current ICBO VCB=80V,IE=0 Emitter cut-off current DC current gain Collector-emitter saturation voltage IEBO hFE* VCE(sat)* VEB=6V,IC=0 VCE=4V, IC=0.5A IC=2A,IB=50mA 400 Base-emitter saturation voltage VBE(sat) IC=2A,IB=50mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz Transition frequency fT *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VCE=5V,IC=0.2A,f=10MHz Typ Max 100 100 2000 0.8 1.5 55 40 Unit V V V μA μA V V pF MHz CLASSIFICATION OF hFE* RANK RANGE H 400-800 J 600-1200 K 1000-2000 www.cj-elec.com 1 A-2,May,2016 Typical Characteristics COLLECTOR CURRENT IC (A) 1.1 COMMON 1.0 EMITTER 0.9 Ta=25℃ 0.8 0.7 0.6 0.5 0.4 0.3 Static Characteristic 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2 0.2mA 0.1 0.0 0 IB=0.1mA 12345 COLLECTOR-EMITTER VOLTAGE VCE (V) 6 V —— I 200 CEsat C 175 150 125 Ta=100℃ 100 75 50 25 0 100 Ta=25℃ 1000 COLLECTOR CURRENT IC (mA) β=40 3000 3000 1000 COMMON EMITTER VCE=4V I C —— V BE BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) DC CURRENT GAIN hFE 10000 1000 100 10 1200 1000 800 600 400 200 0 100 10000 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) CAPACITANCE C (pF) =25℃ =100℃ T a COLLCETOR CURRENT IC (mA) T a 100 100 10 COLLECTOR POWER DISSIPATION PC (mW) 10 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 BASE-EMMITER VOLTAGE VBE (mV) P —— T 3000 Ca 2500 2000 1500 1000 500 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) 1 0.1 www.cj-elec.com 2 h —— FE I C Ta=100℃ Ta=25℃ COMMON EMITTER VCE=4V 100 1000 COLLECTOR CURRENT IC (mA) 3000 V —— I BEsat C Ta=25℃ Ta=100℃ 1000 COLLECTOR CURRENT IC (mA) C /C ob ib —— V /V CB EB Cib β=40 3000 f=1MHz IE=0/IC=0 Ta=25℃ Cob 1 REVERSE VOLTAGE V (V) 10 30 A-2,May,2016 TO-220F Package Outline Dimensions Symbol A A1 A2 A3 b b1 b2 c D E e F Ф h h1 h2 L L1 L2 www.cj-elec.com Dimensions In Millimeters […]

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D2396 Datasheet



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