Part Number : D2494, 2SD2494
Function : Silicon NPN Transistor
Package : TO-3P Type
Manufactures : Sanken electric
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Description :
Equivalent circuit C Darlington 2SD2494 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 16.2 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2494 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA 23.0±0.3 V 9.5±0.2 µA a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 1m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 6 5mA 0. 5m A 0. 4m A 0.3 mA Collector Current I C (A) 4 0.2mA Collector Current I C (A) 2 4 mp) I C =5A p) 2 Cas 1 I C =3A 2 e Tem ˚C ( 25˚C I B =0.1mA 0 0 2 4 6 0 0.1 0.5 1 5 10 50 100 0 0 1 –30˚C 125 (Case (Cas Temp e Te ) 2 3.0 2.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 40000 DC C urrent G ain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 DC Cur rent Gain h F E θ j – a (˚ C/W) θ j-a – t Characteristics 5 Typ 10000 5000 10000 5000 125˚C 25˚C 1000 500 –30˚C Transient Thermal Resistance 1 1000 500 200 0.02 0.5 1 5 10 50 100 Time t(ms) 500 1000 2000 0.1 0.5 1 5 6 100 0.02 0.1 0.5 1 56 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 80 20 Safe Operating Area (Single Pulse) 60 P c – T a Derating Typ 10 5 10 60 Co lle ctor Cu rren t I C (A) M aximu m Power Dissipa tion P C (W) 10 Cu t-of f Fr eque ncy f T (MH Z ) W m D ith s C 0m s 40 In fin ite he 40 1 0.5 Without Heatsink Natural Cooling 0.1 at si nk 20 20 Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150 0 –0.02 –0.1 –1 –6 0.05 3 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 154 […]
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