D2580 Datasheet – 2SD2580 Transistor – Sanyo

Part Number : D2580

Function : 2SD2580

Manufactures : Sanyo Semicon Device

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Description :

Ordering number:5796 NPN Triple Diffused Planar Silicon Transistor 2SD2580 Color TV Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SD2580] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 2.8 2.0 4.0 2.0 20.4 1.0 0.6 1 2 3 2.0 5.45 5.45 1:Base 2:Collector 3:Emitter SANYO:TO3PML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Ratings 1500 800 6 10 30 3.0 Unit V V V A A W W 3.5 Tc=25˚C Tj Tstg 70 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3098TS (KOTO) TA-1137 No.5796-1/4 2SD2580 Continued from preceiding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol VCE(sat) VBE(sat) hFE1 hFE2 tf IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=5V, IC=1A VCE=5V, IC=8A IC=6A, IB1=1.2A, IB2=–2.4A 15 5 Conditons Ratings min typ max 5 1.5 30 8 0.3 µs Unit V V Switching Time Test Circuit PW=20µs DC≤1% INPUT RB 50Ω VR + 100µF VBE=–2V + 470µF VCC=200V RL=33.3Ω IB1 IB2 OUTPUT 10 9 I C – VCE 1.4A 1.6A 1.8A 2.0A 11 10 I C – VBE VCE =5V Collector Current, IC – A Collector Current, IC – A 8 7 6 5 4 3 2 1 0 1.2A 1.0A 0.8A 9 8 7 6 0.6A 0.4A 0.2A 3 2 1 IB=0 0 1 2 3 4 5 6 7 8 9 10 0 0 0.2 0.4 0.6 Ta = 1 4 20˚ C 25˚C – 40˚ C 0.8 1.0 5 1.2 1.4 Collector-to-Emitter Voltage, V […]

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D2580 Datasheet


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