D478 – AOD478

Part Number : D478

Function : AOD478

Manufactures : Alpha & Omega Semiconductors

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D478 image

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Description :

AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 100V 11A < 140mΩ < 152mΩ Top View TO252 DPAK Bottom View D D Top View TO251A IPAK Bottom View D S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM 11 8 24 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR 2.5 2 10 5 TC=25°C Power Dissipation B TC=100°C PD 45 23 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17 55 2.7 Max 25 60 3.3 G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: Nov. 2011 www.aosmd.com Page 1 of 6 AOD478/AOI478 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.5A VGS=4.5V, ID=3A Forward Transconductance VDS=5V, ID=4.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=55°C TJ=125°C 100 1.7 24 2.2 116 225 121 17 0.76 1 5 100 2.8 140 270 152 1 12 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 350 445 540 18 29 35 9 16 23 123 pF pF pF Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 10.3 13 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=50V, ID=4.5A 4 5.1 6.5 nC 1.6 nC Qgd Gate Drain Charge 2.4 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time VGS=10V, VDS=50V, RL=8.6Ω, 3 ns tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns tf Turn-Off Fall Time 4.5 ns trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=500A/µs 14.5 21 27.5 ns Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 68 97 126 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environmen [...]

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D478 Datasheet

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