Part Number : D5032, 3DD5032
Function : Low-frequency amplification shell rated bipolar transistors
Package : TO-3P(H)IS Type
Manufactures : Jilin sino microeletronics
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Description :
D5032 is an NPN bipolar high back pressure high-power transistor. The main process technologies used in manufacturing are: high-voltage mesa technology, triple diffusion technology, etc. It adopts a plastic fully encapsulated structure.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 1500 V
2. Collector to Emitter Voltage : Vceo = 600 V
3. Emitter to Base Voltage : Vebo = 6 V
4. Collector Current : Ic = 8 A
5. Collector Dissipation : Pc = 50 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
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