Part Number : D5N40, HFD5N40
Function : 400V N-Channel MOSFET
Package : TO-251, TO-252 Type
Manufactures : SemiHow
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Description :
HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A Features Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 3.4 2.15 13.6 ±30 510 3.4 4.5 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) Power Dissipation (TC = 25℃) – Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.5 45 0.36 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient- RθJA Junction-to-Ambient – When mounted on the minimum pad size recommended (PCB Mount) Typ. —- Max. 2.78 50 110 Units ℃/W ◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.7 A 2.5 — Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 —– — Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz —- Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 200 V, ID = 4.5 A, RG = 25 Ω (Note 4,5) VDS = 320 V, ID = 4.5 A, VGS = 10 V (Note 4,5) ——– Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 3.4 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) —– […]
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