D600 Transistor – NPN, Datasheet (2SD600)

Part Number : D600

Function : 2SD600

Manufactures : Sanyo Semicon Device

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D600 image

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Description :

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C C0 ondition 2K SB631, D60 (0 –)100 (0 –)100 2t SB631K, D600 (V –)12 (V –)12 (V –)5 (A –)1 (A –)2 1W Uni Tc=25˚C T Tst 8W 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Pl arameter CV ollector-to-Base Breakdown Voltage CV ollector-to-Emitter Brakdown Voltage EV mitter-to-Base Breakdown Voltage CI ollector Cutoff Current EI mitter Cutoff Current Ss ymbo (BR)CBO IC=(–)10µA, IE=0 (BR)CEO IC=(–)1mA, RBE=∞ (BR)EBO CBO EBO IE=(–)10µA, IC=5 0 VCB=(–)50V, IE=1 0 VEB=(–)4V, IC=1 0 Condition B0 631, D600 B0 631K, D600K B0 631, D600 B0 631K, D600K Ratings mp in (V –)10 (V –)12 (V –)10 (V –)12 (V –) (A –) (A –) µ µ tx y ma Unit Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4 http:// 2SB631, 631K/2SD600, 600K Parameter DC Current Gain Gf ain-Bandwidth Product OC utput Capacitance CV ollector-to-Emitter Saturation Voltage BV ase-to-Emitter Saturation Voltage Ft all Time Tt urn-OFF Time St torage Time Symbol hF E 1 hFE2V T ob C E ( s at ) B E ( s at ) f off stg Conditions VCE=(–)5V, IC=(–)50mA (–)500mA CE=(–)5V, IC=0 VCE=(–)10V, IC=(–)50mA VCB=0 (–)10V, f=1MHz IC=(–)500mA, IB=5 (–)50mA IC=(–)500mA, IB=5 (–)50mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 60- 2 (z 1 10) 1z 30 (F 30 ) […]

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D600 Datasheet

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