D613 Transistor – NPN, TO-220, Datasheet (2SD613)

Part Number : D613

Function : 2SD613

Manufactures : Sanyo

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D613 image

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Description :

Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. Package Dimensions unit:mm 2010C [2SB633/2SD613] ( ) : 2SB633 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Output Capacitance ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A IE=(–)5A, IC=(–)1A VCB=(–)10V, f=1MHz JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)100 (–)85 (–)6 (–)6 (–)10 40 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 40- 20 15 (150) 110 max (–)0.1 (–)0.1 320- (–)2.0 (–)1.5 Unit mA mA MHz V V pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/90595MO (KOTO)/D251MH/4017KI/1115MW, TS/No.174, 8-2629 No.513–1/4 2SB633/2SD613 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Fall Time Storage Time Symbol Conditions V(BR)CBO V(BR)CEO V(BR)CEO V(BR)EBO ton IC=(–)5mA, IE=0 IC=(–)5mA, RBE=∞ IC=(–)50mA, RBE=∞ IE=(–)5mA, IC=0 See specified Test Circuit tf See specified Test Circuit tstg See specified Test Circuit – : The 2SB633/2SD613 are classified by 1A hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 Switching Time Test Circuit Ratings min typ (–)100 (–)85 (–)85 (–)6 (0.16) 0.28 (0.33) 0.50 (1.45) 3.60 max Unit V V V V µs µs µs µs µs µs No.513–2/ […]

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D613 Datasheet

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