D669 Datasheet – 2SD669 Transistor

Part Number : D669

Function : 2SD669

Manufactures : Hitachi Semiconductor

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Description :

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC – 1 Tj Tstg Ratings 2SD669 180 120 5 1.5 3 1 20 150 –55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — Emitter to base breakdown voltage V(BR)EBO 5 —— 5 —— Collector cutoff current ICBO DC current transfer ratio hFE1*1 hFE2 Collector to emitter saturation voltage VCE(sat) —— 60 — 30 — —— 10 — 320 60 — 30 1— — — — — 10 200 — 1 Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob — — 1.5 — — 1.5 — 140 — — 140 — — 14 — — 14 — Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows. 2. Pulse test. Unit Test conditions V IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 µA V V MHz pF VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz 2SD669 2SD669A B 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 3 (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 DC Operation(TC = 25°C) 0.1 (120 V, 0.04 A) 0.03 (160 V, 0.02A) 2SD669 2SD669A 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Collector current IC (A) Typical Output Characteristecs 1.0 0.8 0.6 5.5 5.40.54.0 3.5 3.0 2.5 2.0 TC = 25°C P C = 20 W 1.5 0.4 1.0 0.2 0.5 mA IB = 0 0 10 20 30 40 50 Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 75°C 25 –25 Typical Transfer Characteristics 500 200 VCE = 5 V 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) DC current transfer ratio hFE DC Current Transfer Ratio vs. Collector Current 300 Ta = 75°C 250 25 200 150 –25 100 50 VCE = 5 V 1 1 3 10 30 100 300 1,000 3,000 Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector current IC (mA) T C= –2525 75°C 4 Base to emitter saturation vol […]

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D669 Datasheet


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