D863 Transistor, NPN (2SD863)

Part Number : D863

Function : 2SD863

Manufactures : Sanyo Semiconductor Corporation

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D863 image

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Description :

Ordering number:575D PNP/NPN Epitaxial Planar Silicon Transistors 2SB764/2SD863 Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications Package Dimensions unit:mm 2006A [2SB764/2SD863] ( ) : 2SB764 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings B : Base C : Collector E : Emitter Unit (–)60 (–)50 (–)5 (–)1 (–)2 0.9 150 V V V A A W ˚C ˚C –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)500mA, IB=(–)50mA IC=(–)500mA, IB=(–)50mA 60- 30 150 (20) 12 (–0.2) 0.15 (–)0.85 (–0.7) 0.5 (–)1.2 MHz pF pF V V V Conditions Ratings min typ max (–)1 (–)1 320- Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/4107KI/3085MW, TS No.575–1/4 2SB764/2SD863 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Symbol V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 Conditions Ratings min (–)60 (–)50 (–)5 typ max Unit V V V – : The SB764/2SD863 are classified by 50mA hFE as follows : 60 D 120 100 E 200 160 F 320 No.575–2/4 2SB764/2SD863 No.575–3/4 2SB764/2SD863 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of […]

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D863 Datasheet

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