Part Number : D880
Function : NPN Epitaxial Silicon Transistor
Manufactures : Elite
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Description :
D880 NPN Epitaxial Silicon Transistor TO-220 LOW FREQUENCY POWER AMPLIFIER Complement to B834 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=30W Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 60 60 7 3 30 150 -55~+150 Unit V V V A W o o C C 1. Base 2. Collector 3. Emitter Electrical Characteristics (TA=25oC) Characteristic Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Symbol BVCEO IEBO ICBO hFE(1) hFE(2) VCE(SAT) VBE(ON) fT COB tON tSTG tF Test Conditions IC=50mA, IB=0 VEB=7V, IC=0 VCB=60V, IE=0 VCE=5V, IC=0.5A VCE=5V, IC=3A IC=3A, IB=0.3A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCB=10V, IE=0, f=1MHz VCC=30V, IC=1A IB1=-IB2=0.2A RL=30£[ 60 20 0.4 0.7 3 70 0.8 1.5 0.8 1 1 V V MHz pF £g s £g s £g s Min 60 100 100 300 Typ Max Unit V £g A £g A hFE CLASSIFICATION Classification hFE1 O 60 – 120 Y 100 – 200 G 150 -300 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Part No.: D880 Page: 1 / 1 Free Datasheet http:/// […]
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