F3NK80Z – STF3NK80Z

Part Number : F3NK80Z

Function : STF3NK80Z

Manufactures : STMicroelectronics

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F3NK80Z image

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pinout

Description :

STP3NK80Z – STF3NK80Z STD3NK80Z – STD3NK80Z-1 N-channel 800V – 3.8Ω – 2.5A – TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET General features Type STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 ■ VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 4.5 Ω < 4.5 Ω < 4.5 Ω < 4.5 Ω ID 2.5 A 2.5 A 2.5 A 2.5 A 3 1 1 3 2 3 1 2 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility DPAK IPAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1 Marking P3NK80Z F3NK80Z D3NK80Z D3NK80Z Package TO-220 TO-220FP DPAK IPAK Packaging Tube Tube Tape & reel Tube August 2006 Rev 4 1/18 www.st.com 18 Contents STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Contents 1 Electrical ratings . . 3 1.1 Protection features of gate-to-source zener diodes . . 4 2 Electrical characteristics . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuit . . 10 Package mechanical data . . . . 11 Packing mechanical data . . . 16 Revision history . . . . .. 17 2/18 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value TO-220 / DPAK IPAK TO-220FP V V V 2.5 (1) 1.57 (1) 10 (1) 25 0.2 2 4.5 -55 to 150 2500 A A A W W/°C V V/ns V °C Unit VDS VDGR VGS ID ID IDM(2) PTOT Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 2.5 1.57 10 70 0.56 800 800 ± 30 VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pul [...]

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F3NK80Z Datasheet


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