FGA25N120AN – IGBT

Part Number : FGA25N120AN

Function : IGBT

Manufactures : Fairchild Semiconductor

Images :

1 page
FGA25N120AN image

2 page
pinout

Description :

FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G E TO-3P G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA25N120AN 1200 ± 20 40 25 75 310 125 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. –Max. 0.4 40 Units °C/W °C/W ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A FGA25N120AN Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 —-0.6 —-3 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 40A, VGE = 15V 3.5 —5.5 2.5 2.9 3.1 7.5 3.2 –V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz —2100 180 90 —pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ——————60 60 170 45 4.8 1.0 5.7 60 60 180 70 5.5 1.4 6.9 200 15 105 14 —90 7.2 1.5 8.7 ——-300 23 160 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load […]

3 page
image

FGA25N120AN Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.