FGPF4633 – PDP IGBT

Part Number : FGPF4633

Function : PDP IGBT

Manufactures : Fairchild Semiconductor

Images :

1 page
FGPF4633 image

2 page
pinout

Description :

FGPF4633 330V PDP Trench IGBT February 2010 FGPF4633 330V PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System GC E TO-220F (Potted) Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)- PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC Ratings 330 ± 30 300 30.5 12.2 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5µsec - Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 4.1 62.5 Units o o C /W C /W ©2010 Fairchild Semiconductor Corporation FGPF4633 Rev. A 1 www.fairchildsemi.com Free Datasheet http:/// FGPF4633 330V PDP Trench IGBT Package Marking and Ordering Information Device Marking FGPF4633 Device FGPF4633TU Package TO-220F Packaging Type Tube Qty per Tube 50ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES ∆TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 - 0.3 - 100 ±400 V V/oC µA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V IC = 70A, VGE = 15V, TC = 25oC IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1715 75 55 pF pF pF 2.4 3.3 1.1 1.35 1.55 4.0 1.8 V V V 1.61 - V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A VGE = 15V VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A RG = 5Ω, VGE = 15V Resistive Load, TC = 25oC 8 30 52 260 8 32 53 341 60 8 20 ns ns ns ns ns ns ns ns nC nC nC FGPF4633 Rev. A 2 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Typical P [...]

3 page
image

FGPF4633 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.