FQPF10N20C – 200V N-Channel MOSFET

Part Number : FQPF10N20C

Function : 200V N-Channel MOSFET

Manufactures : Fairchild Semiconductor

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FQPF10N20C image

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Description :

FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. TM Features 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage – Continuous (TC = 25°C) Drain Current – Continuous (TC = 100°C) Drain Current – Pulsed (Note 1) FQP10N20C 9.5 6.0 38 FQPF10N20C 200 9.5 – 6.0 – 38 – ± 30 210 9.5 7.2 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) – Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8″ from case for 5 seconds 72 0.57 -55 to +150 300 38 0.3 – Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP10N20C 1.74 0.5 62.5 FQPF10N20C 3.33 -62.5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, March 2003 FQP10N20C/FQPF10N20C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ——0.28 ——10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.75 A VDS = 40 V, ID = 4.75 A (Note 4) 2.0 — -0.29 5.5 4.0 0.36 — V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz —395 97 40.5 510 125 53 p […]

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FQPF10N20C Datasheet


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