FTU01N60 – 600V N-Channel MOSFET

Part Number : FTU01N60

Function : 600V N-Channel MOSFET

Manufactures : ark

Images :

1 page
FTU01N60 image

2 page
pinout

Description :

600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 4.8nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  CFL  Active PFC  Low Power Lamp Ballasts  Low Power Adaptor/Battery Chargers FTU01N60/FTD01N60 BVDSS 600V RDS(ON) (Max.) 9.0Ω ID 1.0A Ordering Information Part Number Package FTU01N60 TO-251(I-PAK) FTU01N60G TO-251(I-PAK) FTD01N60 TO-252(D-PAK) FTD01N60G TO-252(D-PAK) Marking 01N60 01N60G 01N60 01N60G Remark RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol VDSS Parameter Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100℃ IDM PD Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=40mH, ID=1.0A Peak Diode Recovery dv/dt[3] TL Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Storage Temperature Range TC=25℃ unless otherwise specified FTU01N60 FTD01N60 Unit 600 V 1.0 Figure 3 A Figure 6 29 W 0.23 W/℃ ±30 V 20 mJ 4.5 V/ns 300 -55 to 150 ℃ Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ARK Microelectronics Co., Ltd. w w w. a r k – m i c r o . c o m 1/11 Rev. 2.1 Jan. 2012 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient FTU01N60/FTD01N60 FTU01N60 FTD01N60 4.3 100 Unit ℃/W Electrical Characteristics OFF Characteristics Symbol Parameter TC =25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V, ID=250µA △BVDSS/△TJ Breakdown Voltage Temperature Coefficient — 0.6 — V/℃ Reference to 25℃, ID=250µA — — 20 VDS=600V, VGS=0V IDSS Drain-to-Source Leakage Current — µA — 100 VDS=480V, VGS=0V, TC=125℃ — — 100 IGSS Gate-to-Source Leakage Current nA — — -100 VGS=+30V VGS=-30V ON Characteristics Symbol Parameter RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage gfs Forward Transconductance Min. — 2.0 — Typ. 7.2 -0.9 Max. 9.0 4.0 — TC =25℃ unless otherwise specified Unit Test Conditions Ω VGS=10V, ID=0.5A[4] V VDS = VGS, ID=250µA S VDS =15V, ID=1.0A[4] Dynamic Characteristics Symbol Parameter CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge QGS Gate-to-Source Charge QGD Gate-to-Drain (Miller) Charge Min. ——- Essentially independent of operating temperature Typ. Max. Unit Test Conditions 163 -12.8 -2.5 — pF VGS=0V VDS=25V f=1.0MHZ Figure 14 4.8 -0.7 — nC 2.2 — VDD=300V ID=1.0A Figure 15 Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Ti […]

3 page
image

FTU01N60 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.