FTW20N50A – N-Channel MOSFET

Part Number : FTW20N50A

Function : N-Channel MOSFET

Manufactures : IPS

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FTW20N50A image

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Description :

FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features˖ z Fast Switching z Low ON Resistance(RdsoQİŸ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test Applications˖ Power switch circuit of electron ballast and adaptor. Absolute˄Tc= 25ć unless otherwise specified˅˖ VDSS ID PD (TC=25ć) RDS(ON) TO–3P(N) 500 20 230 0.26 V A W Ÿ Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJˈTstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 500 20 12 80 f30 950 90 14 4.0 230 1.85 150ˈ–55 to 150 FTP04N 300 Units V A A A V mJ mJ A V/ns W W/ć ć ć ©2009 InPower Semiconductor Co., Ltd. Page 1 of 10 FTW20N50A REV. A. Jul. 2009 Electrical Characteristics˄Tc= 25ć unless otherwise specified˅˖ OFF Characteristics Symbol Parameter Test Conditions VDSS BVDSS/TJ IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250μA ID=250uA,Reference2ć VDS = 500V, VGS= 0V, Ta = 25ć VDS =400V, VGS= 0V, Ta = 125ć VDS =0V, VGS= 30V VDS =0V, VGS= -30V Rating Min. Typ. Max. 500 — — 0.55 — — 10 100 — — 100 — — -100 Units V V/ć μA nA nA ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Pulse width tpİ380μs,¥İ2% Test Conditions VGS=10V,ID=10A VDS = VGS, ID = 250μA Rating Min. Typ. Max. — 0.26 0.3 2.0 — 4.0 Units Ÿ V Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Resistive Switching Characteristics Symbol Parameter td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain (“Miller”)Charge Test Conditions VDS=15V, ID =10A VGS = 0V VDS = 25V f = 1.0MHz Test Conditions ID =20A VDD = 250V RG = 25Ÿ ID =20A VDD =400V VGS = 10V Rating Min. Typ. Max. 13 17 — 4500 6000 — 350 460 — 65 80 Units S pF Rating Min. Typ. Max. — 55 120 — 145 310 — 280 770 — 135 370 — 130 170 — 20 — 45 Units ns nC ©2009 InPower Semiconductor Co., Ltd. Pa […]

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FTW20N50A Datasheet


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