G15N60 – Fast IGBT

Part Number : G15N60

Function : Fast IGBT

Manufactures : Infineon

Images :

1 page
G15N60 image

2 page
pinout

Description :

SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: – Motor controls – Inverter • NPT-Technology for 600V applications offers: – very tight parameter distribution – high ruggedness, temperature stable behaviour – parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3-21 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55…+150 260 °C 2 VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 June 06 SGP15N60 SGW15N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJA Conditions Max. Value 0.9 Unit K/W PG-TO-220-3-1 PG-TO-247-3-21 62 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 3 Typ. 2 2.3 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 5 Unit V µA 40 2000 100 960 101 62 99 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C 2) Allowed number of short circuits: <1000; time b [...]

3 page
image

G15N60 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.