G23N60UFD – SGF23N60UFD

Part Number : G23N60UFD

Function : SGF23N60UFD

Manufactures : Fairchild Semiconductor

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Description :

SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO–33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30 -55 to +150 -55 to +150 300 Typ. —- Max. 1.6 3.0 40 Units V V A A A A A W W °C °C °C Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn- On Switching Loss Turn- Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V VCE = 30V, VGE = 0V, f = 1MHz VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from […]

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G23N60UFD Datasheet


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