G30N60HS PDF Datasheet – 600V, 30A, High Speed IGBT

Part Number: G30N60HS

Function: 600V, 30A, High Speed IGBT

Package: TO-220-3,  TO-247-3 Type

Manufacturer: Infineon


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SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff) Tj Marking Package SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s VCE IC ICpuls – EAS VGE tSC Ptot Tj , Tstg Tj(tl) – 600 41 30 112 112 165 ±20 ±30 10 250 -55…+150 175 260 Unit V A mJ V µs W °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.4 Nov 09 SGP30N60HS SGW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 Max. Value 0.5 62 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance V(BR)CES VCE(sat) VGE(th) ICES IGES gfs VGE=0V, IC=500µA VGE = 15V, IC=30A Tj=25°C Tj=150°C IC=700µA,VCE=VGE VCE=600V,VGE=0V Tj=25°C Tj=150°C VCE=0V,VGE=20V VCE=20V, IC=30A min. 600 3 – Value Typ. – 2.8 3.5 4 20 max. Unit -V 3.15 4.00 5 40 3000 100 – µA nA S Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) LE IC(SC) VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=30A VGE=15V PG-TO-220-3-1 PG-TO-247-3-21 VGE=15V,tSC≤10µs VCC ≤ 600V, Tj ≤ 150°C – – – 1500 150 92 141 7 13 220 pF nC nH A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors […]


G30N60HS Datasheet