This post explains for the semiconductor G4BC20FD.
The Part Number is IRG4BC20FD.
The function of this semiconductor is 600V, 9A, IGBT.
Manufacturers : International Rectifier
Preview images :
This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits
• Generation -4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
• Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25° […]