G4BC20FD PDF Datasheet – 600V, 9A, IGBT – IRG4BC20FD

This post explains for the IGBT.

The Part Number is G4BC20FD, IRG4BC20FD.

The function of this semiconductor is 600V, 9A, IGBT.

Manufacturer: International Rectifier

Preview images :G4BC20FD pinout datasheet

Description

G4BC20FD is 600V, 9A, INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits

• Generation -4 IGBTs offer highest efficiencies available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing

• Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25° […]

G4BC20FD pdf igbt

G4BC20FD PDF Datasheet