G4BC20FD PDF Datasheet – 600V, 9A, IGBT – IRG4BC20FD

This post explains for the semiconductor G4BC20FD.

The Part Number is IRG4BC20FD.

The function of this semiconductor is 600V, 9A, IGBT.

Manufacturers : International Rectifier

Preview images :

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G4BC20FD image

Description :

This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Features :

• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits

• Generation -4 IGBTs offer highest efficiencies available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing

• Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25° […]

 

G4BC20FD Datasheet