GB15B60KD – IRGB15B60KD

Part Number : GB15B60KD

Function : IRGB15B60KD

Manufactures : International Rectifier

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Description :

PD – 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB15B60KD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current „ Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. D2Pak IRGS15B60KD Max. 600 31 15 62 62 31 15 64 ± 20 208 83 -55 to +150 TO-262 IRGSL15B60KD Units V A V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case – IGBT Junction-to-Case – Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount  Junction-to-Ambient (PCB Mount, steady state)‚ Weight Min. ––– ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– ––– 1.44 Max. 0.6 2.1 ––– 62 40 ––– Units °C/W g www.irf.com 1 8/18/04 IRG/B/S/SL15B60KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Temperature Coeff. of Breakdown Voltage ––– 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 ––– 2.05 ––– 2.10 Gate Threshold Voltage 3.5 4.5 Temperature Coeff. of Threshold Voltage ––– -10 Forward Transconductance ––– 10.6 Zero Gate Voltage Collector Current ––– 5.0 ––– 500 Diode Forward Voltage Drop ––– 1.20 ––– 1.20 Gate-to-Emitter Leakage Current ––– ––– Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) 2.20 IC = 15A, VGE = 15V 2.50 V IC = 15A, VGE = 15V TJ = 125°C 2.60 IC = 15A, VGE = 15V TJ = 150°C 5.5 V VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) ––– S VCE = 50V, IC = 20A, PW=80µs 150 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.45 IC = 15A 1.45 V IC = 15A TJ = 150°C ±100 nA VGE = ±20V Ref.Fig. 5, 6,7 9, 10,11 […]

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GB15B60KD Datasheet


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