GFP60N03 – N-Channel Enhancement-Mode MOSFET

Part Number : GFP60N03

Function : N-Channel Enhancement-Mode MOSFET

Manufactures : General Semiconductor

Images :

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GFP60N03 image

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pinout

Description :

GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N ct E ET u R d T ENF ro P New G ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11mΩ ID 60A D G – 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) S Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) – May be notched or flat Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC RθJA C = 25°C unless otherwise noted) Limit 30 Unit V ± 20 60 100 62.5 25 –55 to 150 275 2.0 62.5 A W °C °C °C/W °C/W 5/1/01 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Notes: (1) Maximum DC current limited by the package GFP60N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 30A VGS = 4.5V, ID = 25A VDS = 10V, ID = 25A IS = 25A, VGS = 0V Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD 30 1.0 3.0 ±100 1 60 9 13 40 0.9 1.3 11 16 V nA µA A mΩ S V Drain-Source On-State Resistance(1) Forward Transconductance(1) Diode Forward Voltage Dynamic (1) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Reverse Recovery Time Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss trr VDS =15V, VGS =5V, ID =50A VDS = 15V, VGS = 10V ID = 50A VDD = 15V, RL = 15Ω ID ≈ 1A, VGEN = 10V RG = 6Ω VGS = 0V VDS = 15V f = 1.0MHZ IF = 25A, di/dt = 100A/µs – – – 16 35 8 6 11 11 48 15 1850 […]

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GFP60N03 Datasheet


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