GIB10B60KD1 PDF Datasheet – 600V, 16A, IGBT – IRGIB10B60KD1

This post explains for the IGBT.

The Part Number is GIB10B60KD1, IRGIB10B60KD1.

The function of this semiconductor is 600V, 16A, IGBT.

Manufacturers : International Rectifier

Preview images :

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GIB10B60KD1 image

Description :

This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Features :

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature Rated at 175°C

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 600 V

2. Gate to emitter voltage : Vges = ± 20 V

3. Collector current : Ic = 16 A

4. Collector dissipation : Pc = 44 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +175 °C

 

Benefits :

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI. • Excellent Current Sharing in Parallel Operation.  […]

 

GIB10B60KD1 Datasheet