This post explains for the IGBT.
The Part Number is GIB10B60KD1, IRGIB10B60KD1.
The function of this semiconductor is 600V, 16A, IGBT.
Manufacturers : International Rectifier
Preview images :
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Description :
This is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
Features :
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 600 V
2. Gate to emitter voltage : Vges = ± 20 V
3. Collector current : Ic = 16 A
4. Collector dissipation : Pc = 44 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +175 °C
Benefits :
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI. • Excellent Current Sharing in Parallel Operation. […]