GP30B120KD-E Datasheet – 1200V, IGBT – IRGP30B120KD-E

This post explains for the semiconductor GP30B120KD-E.

The Part Number is GP30B120KD-E.

The function of this semiconductor is IRGP30B120KD-E.

Manufacturers : International Rectifier

Preview images :

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GP30B120KD-E image

Description :

PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collect […]

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GP30B120KD-E Datasheet

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