H20R1202 – Reverse Conducting IGBT

Part Number : H20R1202

Function : Reverse Conducting IGBT

Manufactures : Infineon Technologies

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H20R1202 image

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Description :

IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW20N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 40 20 60 60 40 20 30 50 130 120 ±20 ±25 330 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 20A VCE(sat),Tj=25°C 1.55V Tj,max 175°C Marking H20R1202 Package PG-TO-247-3-21 C G E PG-TO-247-3-21 ICpul s IF VGE 1 J-STD-020 and JESD-022 1 Rev. 1.2 July 06 Power Semiconductors IHW20N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C T j =1 2 5 ° C T j =1 7 5 ° C Diode forward voltage VF V G E = 0V , I F = 2 0 A T j =2 5 ° C T j =1 2 5 ° C T j =1 7 5 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 5m A, VCE=VGE V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 7 5 ° C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A 14.5 none 5 2500 100 nA S Ω 5.1 1.45 1.6 1.65 5.8 1.7 6.4 µA 1.55 1.75 1.85 1.75 1200 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.45 RthJC 0.45 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 1.2 July 06 IHW20N120R2 Soft Switching Series Dynamic [...]

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H20R1202 Datasheet


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