H25R1202 PDF Datasheet – 1200V, 25A, IGBT

Part Number : H25R1202, IHW25N120R2

Function : 1200V, 25A, Reverse Conducting IGBT

Package : TO-247-3 Type

Manufactures : Infineon

Images :

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H25R1202 image

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Description :

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode

Features :

• Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications :

• Inductive Cooking • Soft Switching Applications Type IHW25N120R2

Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, Power Semiconductors IHW25N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage. Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.41 RthJC 0.41 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 2 Feb. 07 IHW25N120R2 Soft Switching Series Dynamic C […]

 

H25R1202 Datasheet