H25R1202 – Reverse Conducting IGBT

Part Number : H25R1202

Function : Reverse Conducting IGBT

Manufactures : Infineon

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H25R1202 image

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pinout

Description :

IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW25N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 50 25 75 75 50 25 75 50 130 120 ±20 ±25 365 -40...+175 -55...+175 260 W °C V Unit V A VCE 1200V IC 25A VCE(sat),Tj=25°C 1.6V Tj,max 175°C Marking H25R1202 Package PG-TO-247-3-21 C G E PG-TO-247-3-21 ICpul s IF VGE 1 J-STD-020 and JESD-022 1 Rev. 2 Feb. 07 Power Semiconductors IHW25N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 25 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Diode forward voltage VF V G E = 0V , I F = 2 5 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 58m A , VCE=VGE V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 7 5 ° C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 25 A 16.3 none 4 2500 100 nA S Ω 5.1 1.5 1.75 1.8 5.8 1.75 6.4 µA 1.6 1.95 2.0 1.8 1200 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.41 RthJC 0.41 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 2 Feb. 07 IHW25N120R2 Soft Switching Series Dynamic C [...]

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H25R1202 Datasheet


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