H6NA80FI – STH6NA80FI

Part Number : H6NA80FI

Function : STH6NA80FI

Manufactures : ST Microelectronics

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H6NA80FI image

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Description :

® STW6NA80 STH6NA80FI N – CHANNEL 800V – 1.8Ω – 5.4A – TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5.4 A 3.4 A STW 6NA80 STH6NA80FI s s s s s s s TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 1 TO-247 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W6NA80 V DS V DGR V GS ID ID I DM ( • ) P tot V ISO Ts tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 ± 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1.2  -65 to 150 150 C C (•) Pulse width limited by safe operating area October 1998 1/10 STW6NA80-STH6NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOW AT T218 2.08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS E AR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, δ < 1%) Max Valu e 5.4 150 5.8 3.4 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 800 25 50 ± 100 T yp. Max. Unit V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (VDS = 0) V GS = ± 30 V Tc = 100 o C ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 µ A Min. 2.25 T yp. 3 1.8 T c = 100 C 5.4 o Max. 3.75 2.2 4.4 Unit V Ω Ω A Static Drain-source O n V GS = 10 V ID = 3 A Resistance V GS = 10 V I D = 3 A On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitan […]

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H6NA80FI Datasheet


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